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Current Applied Physics

Volumn 4, Issue 6, 2004, Pages 625-629

Characterization of N-doped ZnO layers grown on (0 0 0 1) GaN/Al2O3 substrates by molecular beam epitaxy

(8) Oh, D C a Setiawan, A a Kim, J J b Ko, H J c Makino, H b Hanada, T a Cho, M W a,b Yao, T a,b

a TOHOKU UNIVERSITY (Japan)

b TOHOKU UNIVERSITY (Japan)

c Korea Photonics Technology Institute (KOPTI) (South Korea)

Author keywords

Deep level; Schottky contact; ZnO

Indexed keywords

EID: 5144234697 PISSN: 15671739 EISSN: None Source Type: Journal
DOI: 10.1016/j.cap.2004.01.035 Document Type: Article

Times cited : (12)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.