Current-voltage (I-V) studies of Mo/γ-In2Se 3/ZnO:Al diode structures

Journal of Physics D: Applied Physics

Volumn 40, Issue 24, 2007, Pages 7675-7681

  Morsli, M ^a   Amory, C ^a   Bougrine, A ^a   Cattin, L ^a   Bernede J C ^a  

^a UNIVERSITÉ DE NANTES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ENERGY GAP; MAGNETRON SPUTTERING; PARTIAL PRESSURE; PHOTOVOLTAIC EFFECTS; VACUUM DEPOSITION; ZINC OXIDE;

DIODE STRUCTURES; ELECTRICAL PROPERTIES; TRANSPORT THEORY; TRAP CONTROLLED SPACE CHARGES;

DIODES;

EID: 36749034973     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/40/24/013     Document Type: Article

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