Comparison of SiO2 and HfO2/SiO2 gate stacks electrical behaviour at a nanometre scale with CAFM

Electronics Letters

Volumn 41, Issue 12, 2005, Pages 719-721

  Blasco, X ^a   Nafria M ^a   Aymerich, X ^a   Vandervorst, W ^b  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; ELECTRIC CHARGE; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; HAFNIUM COMPOUNDS; PARAMETER ESTIMATION; SILICA;

BREAKDOWN (BD); ELECTRIC CHARACTERIZATION; GATE ELECTRODES; NANOMETER SCALE;

GATES (TRANSISTOR);

EID: 21544465604     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20050805     Document Type: Article

References (5)

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3. 2 gate oxides with Conductive Atomic Force Microscope', IEEE Trans. Electron Devices, 2003, 50, (4), pp. 933-940
4. 2/high-k stacks', IEDM, 2002, pp. 521-524
5. 2 films measured by atomic force microscopy', Appl. Phys. Lett., 2002, 81, pp. 3615-3617