-
1
-
-
0001642537
-
-
0003-6951. 10.1063/1.123402
-
I. Tanaka, I. Kamiya, H. Sakaki, N. Qureshi, S. J. Allen, Jr., and P. M. Petroff, Appl. Phys. Lett. 0003-6951 74, 844 (1999). 10.1063/1.123402
-
(1999)
Appl. Phys. Lett.
, vol.74
, pp. 844
-
-
Tanaka, I.1
Kamiya, I.2
Sakaki, H.3
Qureshi, N.4
Allen Jr., S.J.5
Petroff, P.M.6
-
2
-
-
0037846081
-
-
0039-6028. 10.1016/S0039-6028(03)00088-8
-
I. Tanaka, E. Kawasaki, O. Ohtsuki, K. Uno, M. Hara, H. Asami, and I. Kamiya, Surf. Sci. 0039-6028 532-535, 801 (2003). 10.1016/S0039-6028(03)00088-8
-
(2003)
Surf. Sci.
, vol.532-535
, pp. 801
-
-
Tanaka, I.1
Kawasaki, E.2
Ohtsuki, O.3
Uno, K.4
Hara, M.5
Asami, H.6
Kamiya, I.7
-
3
-
-
21544465604
-
2 gate stacks electrical behaviour at a nanometre scale with CAFM
-
DOI 10.1049/el:20050805
-
X. Blasco, M. Nafria, X. Aymerich, and W. Vandervorst, Electron. Lett. 0013-5194 41, 719 (2005). 10.1049/el:20050805 (Pubitemid 40921186)
-
(2005)
Electronics Letters
, vol.41
, Issue.12
, pp. 719-721
-
-
Blasco, X.1
Nafria, M.2
Aymerich, X.3
Vandervorst, W.4
-
4
-
-
37149055332
-
Statistics of electrical breakdown field in Hf O2 and Si O2 films from millimeter to nanometer length scales
-
DOI 10.1063/1.2822420
-
C. Sire, S. Blonkowski, M. J. Gordon, and T. Baron, Appl. Phys. Lett. 0003-6951 91, 242905 (2007). 10.1063/1.2822420 (Pubitemid 350262022)
-
(2007)
Applied Physics Letters
, vol.91
, Issue.24
, pp. 242905
-
-
Sire, C.1
Blonkowski, S.2
Gordon, M.J.3
Baron, T.4
-
5
-
-
0036472253
-
Characterization of silicon gate oxides by conducting atomic force microscopy
-
DOI 10.1002/sia.1183
-
S. Kremmer, C. Teichert, E. Pischler, H. Gold, K. Kuchar, and M. Schatzmayr, Surf. Interface Anal. 0142-2421 33, 168 (2002). 10.1002/sia.1183 (Pubitemid 34180149)
-
(2002)
Surface and Interface Analysis
, vol.33
, Issue.2
, pp. 168-172
-
-
Kremmer, S.1
Teichert, C.2
Pischler, E.3
Gold, H.4
Kuchar, F.5
Schatzmayr, M.6
-
7
-
-
0033698091
-
-
1071-1023. 10.1116/1.591198
-
P. De Wolf, R. Stephenson, T. Trenkler, T. Clarysse, T. Hantschel, and W. Vandervorst, J. Vac. Sci. Technol. B 1071-1023 18, 361 (2000). 10.1116/1.591198
-
(2000)
J. Vac. Sci. Technol. B
, vol.18
, pp. 361
-
-
De Wolf, P.1
Stephenson, R.2
Trenkler, T.3
Clarysse, T.4
Hantschel, T.5
Vandervorst, W.6
-
8
-
-
0037103560
-
2 as dielectric material
-
DOI 10.1063/1.1495075
-
W. Brezna, S. Harasek, H. Enichlmair, E. Bertagnolli, E. Gornik, and J. Smoliner, J. Appl. Phys. 0021-8979 92, 2144 (2002). 10.1063/1.1495075 (Pubitemid 34946459)
-
(2002)
Journal of Applied Physics
, vol.92
, Issue.4
, pp. 2144
-
-
Brezna, W.1
Harasek, S.2
Bertagnolli, E.3
Gornik, E.4
Smoliner, J.5
Enichlmair, H.6
-
9
-
-
18844402660
-
Mapping of local oxide properties by quantitative scanning capacitance spectroscopy
-
DOI 10.1063/1.1881773, 093701
-
W. Brezna, S. Harasek, A. Lugstein, T. Leitner, H. Hoffmann, E. Bertagnolli, and J. Smoliner, J. Appl. Phys. 0021-8979 97, 093701 (2005). 10.1063/1.1881773 (Pubitemid 40682693)
-
(2005)
Journal of Applied Physics
, vol.97
, Issue.9
, pp. 1-4
-
-
Brezna, W.1
Harasek, S.2
Lugstein, A.3
Leitner, T.4
Hoffmann, H.5
Bertagnolli, E.6
Smoliner, J.7
-
11
-
-
0037415948
-
-
0040-6090. 10.1016/S0040-6090(02)01262-2
-
S. Jakschik, U. Schroeder, T. Hecht, M. Gutsche, H. Seidl, and J. W. Bartha, Thin Solid Films 0040-6090 425, 216 (2003). 10.1016/S0040-6090(02)01262- 2
-
(2003)
Thin Solid Films
, vol.425
, pp. 216
-
-
Jakschik, S.1
Schroeder, U.2
Hecht, T.3
Gutsche, M.4
Seidl, H.5
Bartha, J.W.6
-
12
-
-
0346150136
-
-
0003-6951. 10.1063/1.1628402
-
W. Brezna, M. Schramboeck, A. Lugstein, S. Harasek, H. Enichlmair, E. Bertagnolli, E. Gornik, and J. Smoliner, Appl. Phys. Lett. 0003-6951 83, 4253 (2003). 10.1063/1.1628402
-
(2003)
Appl. Phys. Lett.
, vol.83
, pp. 4253
-
-
Brezna, W.1
Schramboeck, M.2
Lugstein, A.3
Harasek, S.4
Enichlmair, H.5
Bertagnolli, E.6
Gornik, E.7
Smoliner, J.8
-
13
-
-
67649516578
-
-
0021-8979. 10.1063/1.3140613
-
C. Eckhardt, W. Brezna, O. Bethge, E. Bertagnolli, and J. Smoliner, J. Appl. Phys. 0021-8979 105, 113709 (2009). 10.1063/1.3140613
-
(2009)
J. Appl. Phys.
, vol.105
, pp. 113709
-
-
Eckhardt, C.1
Brezna, W.2
Bethge, O.3
Bertagnolli, E.4
Smoliner, J.5
-
16
-
-
77950569706
-
-
Elecronic archive: New Semiconductor Materials. Characteristics and Properties, Ioffe Institute, St. Petersburg, Russia.
-
Elecronic archive: New Semiconductor Materials. Characteristics and Properties, Ioffe Institute, St. Petersburg, Russia, http://www.ioffe.rssi.ru/ SVA/NSM/.
-
-
-
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