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Volumn 107, Issue 6, 2010, Pages

Frequency dependent capacitance spectroscopy using conductive diamond tips on GaAs/ Al2 O3 junctions

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTIC APPROACH; CAPACITANCE-VOLTAGE CURVE; CONDUCTIVE DIAMONDS; FREQUENCY BEHAVIOR; FREQUENCY-DEPENDENT CAPACITANCE; GAAS; HIGH FREQUENCY; LOW FREQUENCY; LOW FREQUENCY BEHAVIOR; MINORITY CARRIER CONCENTRATION; NANO SCALE; SCANNING CAPACITANCE; TIP GEOMETRY; TRANSITION FREQUENCIES; TWO-DIMENSIONAL SIMULATIONS;

EID: 77950590602     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3354030     Document Type: Conference Paper
Times cited : (2)

References (16)
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    • 2 gate stacks electrical behaviour at a nanometre scale with CAFM
    • DOI 10.1049/el:20050805
    • X. Blasco, M. Nafria, X. Aymerich, and W. Vandervorst, Electron. Lett. 0013-5194 41, 719 (2005). 10.1049/el:20050805 (Pubitemid 40921186)
    • (2005) Electronics Letters , vol.41 , Issue.12 , pp. 719-721
    • Blasco, X.1    Nafria, M.2    Aymerich, X.3    Vandervorst, W.4
  • 4
    • 37149055332 scopus 로고    scopus 로고
    • Statistics of electrical breakdown field in Hf O2 and Si O2 films from millimeter to nanometer length scales
    • DOI 10.1063/1.2822420
    • C. Sire, S. Blonkowski, M. J. Gordon, and T. Baron, Appl. Phys. Lett. 0003-6951 91, 242905 (2007). 10.1063/1.2822420 (Pubitemid 350262022)
    • (2007) Applied Physics Letters , vol.91 , Issue.24 , pp. 242905
    • Sire, C.1    Blonkowski, S.2    Gordon, M.J.3    Baron, T.4
  • 16
    • 77950569706 scopus 로고    scopus 로고
    • Elecronic archive: New Semiconductor Materials. Characteristics and Properties, Ioffe Institute, St. Petersburg, Russia.
    • Elecronic archive: New Semiconductor Materials. Characteristics and Properties, Ioffe Institute, St. Petersburg, Russia, http://www.ioffe.rssi.ru/ SVA/NSM/.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.