A new fabrication procedure for reproducibly observing leakage current reduction of SiO2 due to enhanced phonon-energy coupling

Biennial University/Government/Industry Microelectronics Symposium - Proceedings

Volumn , Issue , 2008, Pages 53-57

  Ong, Pang Leen ^a   Chen, Zhi ^a  

^a UNIVERSITY OF KENTUCKY   (United States)

Author keywords

Bilayer resist; Gate leakage current; RTP; Ultrathin oxide

Indexed keywords

LEAKAGE CURRENTS; OPTICAL DESIGN;

BILAYER RESIST; CURRENT REDUCTION; FABRICATION PROCEDURE; GATE LEAKAGE CURRENT; LEAKAGE CURRENT REDUCTION; RTP; ULTRATHIN OXIDE;

SILICON COMPOUNDS;

EID: 51849119269     PISSN: 07496877     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/UGIM.2008.21     Document Type: Conference Paper

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