Interface defects in Si/HfO 2-based metal-oxide-semiconductor field-effect transistors

Applied Physics Letters

Volumn 86, Issue 17, 2005, Pages 1-3

  Pribicko, T G ^a   Campbell, J P ^a   Lenahan, P M ^a   Tsai, W ^b   Kerber, A ^c  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b INTEL CORPORATION   (United States)

^c INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DANGLING BONDS; GATE DIELECTRICS; INTERFACE DEFECTS; SPIN DEPENDENT RECOMBINATION (SDR);

CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; DIELECTRIC MATERIALS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); MAGNETIC RESONANCE; SILICA;

MOSFET DEVICES;

EID: 20844457116     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1919397     Document Type: Article

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