Systematic analysis of silicon oxynitride interfacial layer and its effects on electrical characteristics of high-k HfO 2 transistor

Applied Physics Letters

Volumn 88, Issue 15, 2006, Pages

  Rhee, Se Jong ^a   Zhu, Feng ^a   Kim, Hyoung Sub ^a   Kang, Chang Yong ^a   Choi, Chang Hwan ^a   Zhang, Manhong ^a   Lee, Tackhwi ^a   Ok, Injo ^a   Krishnan, Siddarth A ^a   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE PUMPING; FLATBAND VOLTAGE; SILICON OXYNITRIDE;

CURRENT DENSITY; ELECTRIC PROPERTIES; ELECTRON MOBILITY; SILICON COMPOUNDS; SURFACE PROPERTIES; THRESHOLD VOLTAGE;

MOSFET DEVICES;

EID: 33646135303     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2192646     Document Type: Article

References (6)

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5. B. H. Lee, R. Choi, L. G. Kang, S. Gopalan, R. Nieh, K. Onishi, Y. J. Jeon, W. J. Qi, C. S. Kang, and J. C. Lee, Tech. Dig. - Int. Electron Devices Meet. 2000, 39.
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