Comparative studies of atomic layer deposition and plasma-enhanced atomic layer deposition Ta2O5 and the effects on electrical properties of In situ nitridation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 5 B, 2007, Pages 3224-3228

  Maeng, Wan Joo ^a   Lee, Jae Woong ^b   Myoung, Jae Min ^b   Kim, Hyungjun ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Yonsei University   (South Korea)

Author keywords

Atomic layer deposition; Dielectric reliability; in situ nitridation; Interface state; Nitrogen oxygen mixture plasma

Indexed keywords

ATOMIC LAYER DEPOSITION; DIELECTRIC MATERIALS; INTERFACES (MATERIALS); NITRIDATION; TANTALUM COMPOUNDS;

DIELECTRIC RELIABILITY; IN SITU NITRIDATION; INTERFACE STATES; NITROGEN-OXYGEN MIXTURE PLASMAS;

THIN FILMS;

EID: 34547905077     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.3224     Document Type: Article

References (17)

1. K. A. Son, A. Y. Mao, Y. M. Sun, B. Y. Kim, F. Liu, A. Kamath, J. M. White, D. L. Gwong, D. A. Roberts, and R. N. Vrtis: Appl. Phys. Lett. 72 (1998) 1187.
2. S. Boughaba, M. Islam, J. P. McCaffrey, G. I. Sprouele, and M. J. Graham: Thin Solid Films 371 (2000) 119.
3. M. Leskela and M. Ritala: Angew. Chem., Int. Ed. 42 (2003) 5548.
4. W. J. Maeng and H. Kim: Electrochem. Solid-State Lett. 9 (2006) G191.
5. D. A. Buchanan: IBM J. Res. Dev. 43 (1999) 245.
6. R. E. Nieh, C. S. Kang, H.-J. Cho, K. Onishi, R. Choi, S. Krishnan, J. H. Han, Y.-H. Kim, M. S. Akbar, and J. C. Lee: IEEE Trans. Electron Devices 50 (2003) 333.
7. H. J. Cho, D.-G. Park, I. S. Yeo, J.-S. Roh, and J. W. Park: Jpn. J. Appl. Phys. 40 (2001) 2814.
8. S. J. Yun, J. W. Lim, and J. H. Lee: Electrochem, Solid-State Lett. 8 (2005) F47.
9. W. J. Maeng, S. J. Lim, S.-J. Kwon, and H. Kim: Appl. Phys. Lett. 90 (2007) 062909.
10. M. Lee, Z.-H. Lu, W.-T. Ng, D. Landheer, X. Wu, and S. Moisa: Appl. Phys. Lett. 83 (2003) 2638.
11. N. Haraki, S. Nakano, S. Ono, and S. Teii: Elecr. Eng. Jpn. 149 (2004) 14.
12. H. Jung, K. Im, D. Yang, and H. Hwang: IEEE Electron Device Lett. 21 (2000) 563.
13. D. K. Schroder: Semiconductor Material and Characterization (John Wiley & Sons, New York, 2006) 3rd ed.
14. H. J. Song, C. S. Lee, and S. W. Kang: Electrochem. Solid-State Lett. 4 (2001) F13.
15. K. Xiong, J. Robertson, and S. J. Clark: J. Appl. Phys. 99 (2006) 044105.
16. N. Umezawa, K. Shiraishi, T. Ohno, H. Watanabe, T. Chikyow, K. Torii, K. Yamabe, K. Yamada, H. Kitajima, and T. Arikado: Appl. Phys. Lett. 86 (2005) 143507.
17. H. Watanabe, S. Kamiyama, N. Umezawa, K. Shiraishi, S. Yoshida, Y. Watanabe, T. Arikado, T. Chikyow, K. Yamada, and K. Yasutake: Jpn. J. Appl. Phys. 44 (2005) L1333.