The Cu/n-GaAs Schottky barrier diodes prepared by anodization process

Journal of Electronic Materials

Volumn 31, Issue 12, 2002, Pages 1362-1368

  Biber, Mehmet ^a   Türüt, Abdulmecit ^a  

^a ATATÜRK UNIVERSITY   (Turkey)

Author keywords

Anodic oxidation; Metal semiconductor contact; Schottky barrier height; Schottky contacts

Indexed keywords

ANODIC OXIDATION; ELECTROLYTES; FERMI LEVEL; HYDROCHLORIC ACID; MIS DEVICES; PH EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE;

SCHOTTKY CONTACTS;

SCHOTTKY BARRIER DIODES;

EID: 0036910049     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-002-0123-6     Document Type: Article

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