The effect of the electron irradiation on the series resistance of Au/Ni/6H-SiC and Au/Ni/4H-SiC Schottky contacts

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 268, Issue 6, 2010, Pages 616-621

  Çinar, Kübra ^a   Coskun C ^a   Aydoǧan, Ş ^a   Asil, Hatice ^a   Gür, Emre ^a  

^a ATATÜRK UNIVERSITY   (Turkey)

Author keywords

4H SiC; 6H SiC; Electron irradiation; Schottky diode; Series resistance

Indexed keywords

BARRIER HEIGHTS; CONDUCTANCE METHOD; CURRENT TRANSPORT MECHANISM; CURRENT VOLTAGE; DIODE PARAMETERS; ELECTRON ENERGIES; FORWARD CURRENTS; IDEALITY FACTORS; REVERSE CURRENTS; ROOM TEMPERATURE; SCHOTTKY CONTACTS; SCHOTTKY DIODES; SERIES RESISTANCES; SIC DIODES;

DIODES; ELECTRON IRRADIATION; ELECTRONS; RADIATION; SCHOTTKY BARRIER DIODES; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77549086030     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2009.12.019     Document Type: Article

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