Growth of 3C-SiC on Si(111) using the four-step non-cooling process

Thin Solid Films

Volumn 518, Issue 20, 2010, Pages 5700-5703

  Liu, Jui Min ^a   Chen, Wei Yu ^a   Hwang, J ^a   Huang, C F ^a   Wang, Wei Lin ^b   Chang, Li ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Crystal microstructure; Low pressure chemical vapor deposition; Silicon carbide; X ray diffraction

Indexed keywords

COOLING PROCESS; CRYSTAL QUALITIES; EPITAXIALLY GROWN; HIGH QUALITY; MIXED GAS; OFF-AXIS; SELECTED AREA ELECTRON DIFFRACTION PATTERN; SI (1 1 1); SI(111) SUBSTRATE; SI-C BOND; SIC THIN FILMS; STEP METHOD; STRESS-INDUCED; VOID DENSITY; X RAY INTENSITY; X RAY ROCKING CURVE;

CRYSTAL MICROSTRUCTURE; HOLOGRAPHIC INTERFEROMETRY; LATTICE MISMATCH; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; SILICON; SILICON CARBIDE; STACKING FAULTS; THIN FILMS; VAPOR DEPOSITION; X RAY DIFFRACTION; X RAYS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77955422659     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.05.055     Document Type: Conference Paper

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