Formation and structural characterization of nanocrystalline Si/SiC multilayers grown by hot filament assisted chemical vapor deposition using CH3SiH3 gas jets

Thin Solid Films

Volumn 518, Issue 14, 2010, Pages 3759-3762

  Ikoma, Yoshifumi ^a   Okuyama, Ryousuke ^a   Arita, Makoto ^a   Motooka, Teruaki ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

Chemical vapor deposition; Multilayer; Nanocrystals; Silicon; Silicon carbide; Transmission electron microscopy; X ray photoelectron spectroscopy

Indexed keywords

AMORPHOUS LAYER; ANNEALING EFFECTS; DOUBLE LAYER STRUCTURE; GAS JET; GAS PULSE; HOT FILAMENT; MULTILAYER GROWTH; NANOCRYSTALLINES; SI ATOMS; SI DIFFUSION; SI NANOCRYSTAL; SI(1 0 0); SIC GROWTH; STRUCTURAL CHARACTERIZATION; SUBSTRATE TEMPERATURE; ULTRA-THIN;

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; CRYSTALLOGRAPHY; ELECTRONS; FILAMENTS (LAMP); MULTILAYERS; NANOCRYSTALS; PHOTOELECTRICITY; PHOTOIONIZATION; PHOTONS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 77950543814     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.10.127     Document Type: Article

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