Photoluminescence in SiCGe thin films grown on 6H-SiC

Journal of Luminescence

Volumn 130, Issue 4, 2010, Pages 587-590

  Lianbi, Li ^a   Zhiming, Chen ^a   Jia, Li ^a   Yangyang, Zhou ^b   Jiannong, Wang ^b  

^a XI'AN UNIVERSITY OF TECHNOLOGY   (China)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Hetero juction; Photoluminescence spectroscopy; SiC; SiCGe

Indexed keywords

HETERO-JUCTION; HIGH DENSITY; HYDROGENATED AMORPHOUS SILICON; PL INTENSITY; ROOM TEMPERATURE; SIC(0 0 0 1); TEM CHARACTERIZATION; UV LASER EXCITATION; VISIBLE LUMINESCENCE;

AMORPHOUS SILICON; LASER EXCITATION; PHOTOLUMINESCENCE; PHOTOLUMINESCENCE SPECTROSCOPY; SILICON CARBIDE; STACKING FAULTS; SULFUR COMPOUNDS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 74149090322     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2009.10.035     Document Type: Article

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