Analysis of mechanical properties of N2 in situ doped polycrystalline 3C-SiC thin films by chemical vapor deposition using single-precursor hexamethyildisilane

Physica B: Condensed Matter

Volumn 405, Issue 2, 2010, Pages 513-516

  Kim, Kang San ^a   Han, Ki Bong ^a   Chung, Gwiy Sang ^a  

^a University of Ulsan   (South Korea)

Author keywords

Hardness; In situ doping; Nano indentor; Poly 3C SiC; Young's modulus

Indexed keywords

ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION; DOPANT SOURCES; IN-SITU; IN-SITU DOPING; POLY 3C-SIC; POLYCRYSTALLINE; POLYCRYSTALLINE 3C-SIC; SIC THIN FILMS; YOUNG'S MODULUS;

ATMOSPHERIC PRESSURE; ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; DEPOSITION; DOPING (ADDITIVES); ELASTIC MODULI; ELASTICITY; HARDNESS; MECHANICAL PROPERTIES; SILICON CARBIDE; THIN FILMS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 71849088937     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.09.055     Document Type: Article

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