Ti-Ni ohmic contacts on 3C-SiC doped by nitrogen or phosphorus implantation

Materials Science and Engineering: B

Volumn 171, Issue 1-3, 2010, Pages 120-126

  Bazin, A E ^a,b   Michaud, J F ^a   Autret Lambert, C ^a   Cayrel, F ^a   Chassagne, T ^c   Portail, M ^d   Zielinski, M ^c   Collard, E ^b   Alquier, D ^a  

^a UNIVERSITÉ DE TOURS   (France)

^b STMICROELECTRONICS   (France)

^c SAVOIE TECHNOLAC   (France)

^d CNRS   (France)

Author keywords

Annealing; Contact resistance; Ion implantation; Silicon carbide; Transmission electron microscopy

Indexed keywords

ANNEALING; BINARY ALLOYS; CONTACT RESISTANCE; DOPING (ADDITIVES); ELECTRIC CONTACTORS; EPILAYERS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; ION IMPLANTATION; NITROGEN; OHMIC CONTACTS; PHOSPHORUS; SECONDARY ION MASS SPECTROMETRY;

ANNEALING; C VALUES; ELECTRONICS DEVICES; ENERGY; FOURIER TRANSFORMED INFRARED SPECTROSCOPY; IMPLANTED LAYERS; IONS IMPLANTATION; SECONDARY ION MASS SPECTROSCOPY; SEMICONDUCTOR LAYERS; SIC EPILAYERS;

SILICON CARBIDE;

EID: 77953323879     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2010.03.084     Document Type: Article

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