Instability of incorporated nitrogen in HfO2 films grown on strained Si0.7 Ge0.3 layers

Applied Physics Letters

Volumn 94, Issue 4, 2009, Pages

  Chung, K B ^a   Lucovsky, G ^a   Lee, W J ^b   Cho, M H ^b   Jeon, Hyeongtag ^c  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b Yonsei University   (South Korea)

^c Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ANNEALING; GERMANIUM; HAFNIUM COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; SILICON; SILICON COMPOUNDS; THERMODYNAMIC STABILITY;

ADDITIONAL ANNEALING; ANNEALING TREATMENTS; CHEMICAL STATE; HFO2 FILMS; HIGH RESOLUTIONS; INTERFACIAL CHARACTERISTICS; INTERFACIAL REGIONS; MEDIUM-ENERGY ION SCATTERINGS; N INCORPORATIONS; NEAR-EDGE X-RAY ABSORPTION FINE STRUCTURES; POST-NITRIDATION; THERMAL STABILITIES; X-RAY PHOTOELECTRON SPECTROSCOPIES;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 59349118735     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3077014     Document Type: Article

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