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Volumn 254, Issue 19, 2008, Pages 6116-6118

The effects of plasma treatment on the thermal stability of HfO 2 thin films

Author keywords

Atomic layer deposition (ALD); Effective oxide thickness (EOT); High ; Inductively coupled plasma (ICP)

Indexed keywords

ALUMINUM NITRIDE; ATOMIC LAYER DEPOSITION; HAFNIUM OXIDES; INDUCTIVELY COUPLED PLASMA; NITRIDATION; PLASMA APPLICATIONS; PLASMA STABILITY; SILICA; THERMODYNAMIC STABILITY;

EID: 45049085546     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.02.140     Document Type: Article
Times cited : (12)

References (8)
  • 1
    • 45049088488 scopus 로고    scopus 로고
    • International technology roadmap for semiconductors (ITRS), 2006 update.
    • International technology roadmap for semiconductors (ITRS), 2006 update.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.