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Volumn 254, Issue 19, 2008, Pages 6116-6118
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The effects of plasma treatment on the thermal stability of HfO 2 thin films
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Author keywords
Atomic layer deposition (ALD); Effective oxide thickness (EOT); High ; Inductively coupled plasma (ICP)
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Indexed keywords
ALUMINUM NITRIDE;
ATOMIC LAYER DEPOSITION;
HAFNIUM OXIDES;
INDUCTIVELY COUPLED PLASMA;
NITRIDATION;
PLASMA APPLICATIONS;
PLASMA STABILITY;
SILICA;
THERMODYNAMIC STABILITY;
BORON PENETRATION;
EFFECTIVE OXIDE THICKNESS;
INDUCTIVELY COUPLED PLASMA (ICP);
J-V CHARACTERISTICS;
NITRIDATION PROCESS;
PLASMA NITRIDATION;
PLASMA TREATMENT;
THERMAL PROCESS;
THIN FILMS;
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EID: 45049085546
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/j.apsusc.2008.02.140 Document Type: Article |
Times cited : (12)
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References (8)
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