Voltage-driven partial-RESET multilevel programming in phase-change memories

IEEE Transactions on Electron Devices

Volumn 57, Issue 10, 2010, Pages 2556-2563

  Braga, Stefania ^a   Sanasi, Alessandro ^a   Cabrini, Alessandro ^a   Torelli, Guido ^a  

^a UNIVERSITY OF PAVIA   (Italy)

Author keywords

Multilevel (ML) storage; partial RESET programming; phase change memories (PCMs)

Indexed keywords

CELL BEHAVIORS; HIGH REPRODUCIBILITY; IN-PHASE; MEMORY ARRAY; MULTI-LEVEL; MULTILEVEL PROGRAMMING; PARTIAL-RESET PROGRAMMING; SINGLE CELLS;

PHASE CHANGE MEMORY;

EID: 77956985617     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2062185     Document Type: Article

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