Influence of the V/III molar ratio on the structural and electronic properties of movpe grown GaN

Solid-State Electronics

Volumn 41, Issue 2 SPEC. ISS., 1997, Pages 315-317

  Briot, O ^a   Alexis, J P ^a   Sanchez, S ^a   Gil, B ^a   Aulombard, R L ^a  

^a UNIV MONTPELLIER   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; ELECTRONIC PROPERTIES; EXCITONS; IMPURITIES; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SAPPHIRE;

DONOR ACCEPTOR PAIR; GALLIUM NITRIDE (GAN) EPILAYERS; MOLAR RATIO;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031077518     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0038-1101(96)00235-3     Document Type: Article

References (10)

1. S. Nakamura, T. Mukai and M. Senoh, Appl. Phys. Lett. 64, 1687 (1994).
2. J. Edmond, H. S. Kong, M. Leonard, V. Dmitriev, K. Irvinne and G. Bulman, Proc. Topical Workshop on III-V Nitrides, Nagoya, Japan (1995).
3. B. Goldenberg, J. D. Zook and R. J. Ulmer, Proc. Topical Workshop on III-V Nitrides, Nagoya, Japan (1995).
4. K. S. Stevens, M. Kinniburgh and R. Beresford, Appl. Phys. Lett. 66, 3518 (1995).
5. M. A. Khan et al., Appl. Phys. Lett. 63, 2455 (1993).
6. M. A. Khan et al., Appl. Phys. Lett. 62, 1786 (1993).
7. S. C. Binari, L. B. Rowland, W. Kruppa, G. Kelner, K. Doverspike and D. K. Gaskill, Electron. Lett. 30, 1248 (1994).
8. M. E. Lin, B. N. Sverdlov, S. Strike, H. Morkoç and A. E. Drakin, Electron. Lett. 29, 1759 (1993).
9. B. Gil, O. Briot and R. L. Aulombard, Phys. Rev. B 52, 24 (1995).
10. S. Nakamura, T. Mukai and M. Senoh, Jpn. J. Appl. Phys. 31, 2883 (1992).