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Materials Science and Engineering B

Volumn 50, Issue 1-3, 1997, Pages 201-204

Role of the V/III precursor ratio on exciton dynamics in GaN MOCVD epilayers

(5) Lefebvre, P a Allegre J a Ruffenach Clur, S a Briot, O a Mathieu, H a

a CNRS (France)

Author keywords

Decay time; Photoluminescence spectroscopy; Time integrated spectrum

Indexed keywords

COMPOSITION EFFECTS; EMISSION SPECTROSCOPY; EXCITONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; PHOTOLUMINESCENCE; THIN FILMS;

DECAY TIME; EXCITON RECOMBINATION DYNAMICS; GALLIUM NITRIDE; TIME INTEGRATED SPECTRUM;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0345406621 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(97)00181-5 Document Type: Article

Times cited : (5)

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