Time-resolved spectroscopy of freestanding GaN layers grown by halide vapour phase epitaxy

Superlattices and Microstructures

Volumn 43, Issue 5-6, 2008, Pages 605-609

  Pozina, G ^a   Hemmingsson, C G ^a   Bergman, J P ^a   Trinh, D ^a   Hultman, L ^a   Monemar, B ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

Bound excitons; Freestanding GaN; Time resolved photoluminescence

Indexed keywords

CRYSTAL IMPURITIES; EXCITONS; FILM GROWTH; PHOTOLUMINESCENCE SPECTROSCOPY; VACANCIES; VAPOR PHASE EPITAXY;

BOUND EXCITONS; HALIDE VAPOUR PHASE EPITAXY; TIME RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY;

GALLIUM NITRIDE;

EID: 42949090253     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2007.06.014     Document Type: Article

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