SCOPUS 정보 검색 플랫폼

Volumn 95, Issue 19, 2009, Pages

Fermi-level pinning at the interface between metals and nitrogen-doped Ge2 Sb2 Te5 examined by x-ray photoelectron spectroscopy

(7) Fang, Lina Wei Wei a Zhao, Rong b Pan, Jisheng c Zhang, Zheng c Shi, Luping b Chong, Tow Chong a,b Yeo, Yee Chia a

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

b DATA STORAGE INSTITUTE (Singapore)

c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

FERMI LEVEL PINNING; HOLE BARRIER; NITROGEN-DOPED;

DOPING (ADDITIVES); FERMIONS; GERMANIUM; METALS; NITROGEN; OHMIC CONTACTS; PHOTOELECTRICITY; PHOTOIONIZATION; PHOTONS; TELLURIUM COMPOUNDS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 70449727962 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3263953 Document Type: Article

Times cited : (10)

References (23)

1
- 16244410161
- Low-cost and nanoscale non-volatile memory concept for future silicon chips
- DOI 10.1038/nmat1350
- M. H. R. Lankhorst, B. W. S. M. M. Ketelaars, and R. A. M. Wolters, Nature Mater. 1476-1122 4, 347 (2005). 10.1038/nmat1350 (Pubitemid 40450216)
- (2005) Nature Materials , vol.4 , Issue.4 , pp. 347-352
- Lankhorst, M.H.R.¹ Ketelaars, B.W.S.M.M.² Wolters, R.A.M.³

2
- 45149085112
- 0163-1918.
- Y. C. Chen, C. T. Rettner, S. Raoux, G. W. Burr, S. H. Chen, R. M. Shelby, M. Salinga, W. P. Risk, T. D. Happ, G. M. McClelland, M. Breitwisch, A. Schrott, J. B. Philipp, M. H. Lee, R. Cheek, T. Nirschl, M. Lamorey, C. F. Chen, E. Joseph, S. Zaidi, B. Yee, H. L. Lung, R. Bergmann, and C. Lam, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2006, 777.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2006 , pp. 777
- Chen, Y.C.¹ Rettner, C.T.² Raoux, S.³ Burr, G.W.⁴ Chen, S.H.⁵ Shelby, R.M.⁶ Salinga, M.⁷ Risk, W.P.⁸ Happ, T.D.⁹ McClelland, G.M.¹⁰ Breitwisch, M.¹¹ Schrott, A.¹² Philipp, J.B.¹³ Lee, M.H.¹⁴ Cheek, R.¹⁵ Nirschl, T.¹⁶ Lamorey, M.¹⁷ Chen, C.F.¹⁸ Joseph, E.¹⁹ Zaidi, S.²⁰ more..

3
- 34547871718
- 5 films and its effect on devices
- DOI 10.1143/JJAP.46.2211, Solid State Devices and Materials
- X. Wei, L. Shi, T. C. Chong, R. Zhao, and H. K. Lee, Jpn. J. Appl. Phys., Part 1 0021-4922 46, 2211 (2007). 10.1143/JJAP.46.2211 (Pubitemid 47256753)
- (2007) Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers , vol.46 , Issue.B , pp. 2211-2214
- Wei, X.¹ Shi, L.² Chong, T.C.³ Zhao, R.⁴ Lee, H.K.⁵

4
- 50249169910
- 0163-1918.
- D. L. Kencke, I. V. Karpov, B. G. Johnson, S. J. Lee, D. Kau, S. J. Hudgens, J. P. Reifenberg, S. D. Savransky, J. Zhang, M. D. Giles, and G. Spadini, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2007, 323.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2007 , pp. 323
- Kencke, D.L.¹ Karpov, I.V.² Johnson, B.G.³ Lee, S.J.⁴ Kau, D.⁵ Hudgens, S.J.⁶ Reifenberg, J.P.⁷ Savransky, S.D.⁸ Zhang, J.⁹ Giles, M.D.¹⁰ Spadini, G.¹¹

5
- 60449100840
- 0003-6951,. 10.1063/1.3079396
- L. W.-W. Fang, Z. Zheng, J. Pan, R. Zhao, M. Li, L. Shi, T. -C. Chong, and Y. -C. Yeo, Appl. Phys. Lett. 0003-6951 94, 062101 (2009). 10.1063/1.3079396
- (2009) Appl. Phys. Lett. , vol.94 , pp. 062101
- Fang, L.W.-W.¹ Zheng, Z.² Pan, J.³ Zhao, R.⁴ Li, M.⁵ Shi, L.⁶ Chong, T.-C.⁷ Yeo, Y.-C.⁸

6
- 0141830841
- 0743-1562.
- H. Horii, J. H. Yi, J. H. Park, Y. H. Ha, L. G. Baek, S. O. Park, Y. N. Hwang, S. H. Lee, Y. T. Kim, K. H. Lee, U. -I. Chug, and J. T. Moon, Dig. Tech. Pap.-Symp. VLSI Technol. 0743-1562 2003, 177.
- Dig. Tech. Pap. - Symp. VLSI Technol. , vol.2003 , pp. 177
- Horii, H.¹ Yi, J.H.² Park, J.H.³ Ha, Y.H.⁴ Baek, L.G.⁵ Park, S.O.⁶ Hwang, Y.N.⁷ Lee, S.H.⁸ Kim, Y.T.⁹ Lee, K.H.¹⁰ Chug, U.-I.¹¹ Moon, J.T.¹²

7
- 8644226159
- 0003-6951,. 10.1063/1.1805200
- S. Privitera, E. Rimini, and R. Zonca, Appl. Phys. Lett. 0003-6951 85, 3044 (2004). 10.1063/1.1805200
- (2004) Appl. Phys. Lett. , vol.85 , pp. 3044
- Privitera, S.¹ Rimini, E.² Zonca, R.³

8
- 0000559580
- Measurement of AlN/GaN (0001) heterojunction band offsets by x-ray photoemission spectroscopy
- DOI 10.1063/1.116355, PII S0003695196026204
- J. R. Waldrop and R. W. Grant, Appl. Phys. Lett. 0003-6951 68, 2879 (1996). 10.1063/1.116355 (Pubitemid 126684067)
- (1996) Applied Physics Letters , vol.68 , Issue.20 , pp. 2879-2881
- Waldrop, J.R.¹ Grant, R.W.²

9
- 0037099274
- 3/TCO interface
- DOI 10.1016/S0169-4332(02)00551-2, PII S0169433202005512
- J. C. Bernede, N. Barreau, S. Marsillac, and L. Assmann, Appl. Surf. Sci. 0169-4332 195, 222 (2002). 10.1016/S0169-4332(02)00551-2 (Pubitemid 34803170)
- (2002) Applied Surface Science , vol.195 , Issue.1-4 , pp. 222-228
- Bernede, J.C.¹ Barreau, N.² Marsillac, S.³ Assmann, L.⁴

10
- 79955982792
- 3/Si capacitor deposited by inductively-coupled plasma-assisted radio-frequency-magnetron plasma sputtering
- DOI 10.1063/1.1509467
- T. Kikkawa, N. Fujiwara, H. Yamada, S. Miyazaki, F. Nishiyama, and M. Hirose, Appl. Phys. Lett. 0003-6951 81, 2821 (2002). 10.1063/1.1509467 (Pubitemid 35328530)
- (2002) Applied Physics Letters , vol.81 , Issue.15 , pp. 2821
- Kikkawa, T.¹ Fujiwara, N.² Yamada, H.³ Miyazaki, S.⁴ Nishiyama, F.⁵ Hirose, M.⁶

11
- 20444433980
- 2/Si system
- DOI 10.1063/1.1839287
- Q. Li, S. J. Wang, K. B. Li, A. C. H. Huan, J. W. Chai, J. S. Pan, and C. K. Ong, Appl. Phys. Lett. 0003-6951 85, 6155 (2004). 10.1063/1.1839287 (Pubitemid 40817863)
- (2004) Applied Physics Letters , vol.85 , Issue.25 , pp. 6155-6157
- Li, Q.¹ Wang, S.J.² Li, K.B.³ Huan, A.C.H.⁴ Chai, J.W.⁵ Pan, J.S.⁶ Ong, C.K.⁷

12
- 54749085062
- 0021-8979,. 10.1063/1.2982085
- S. Y. Chiam, W. K. Chim, Y. Ren, C. Pi, J. S. Pan, A. C. H. Huan, S. J. Wang, and J. Zhang, J. Appl. Phys. 0021-8979 104, 063714 (2008). 10.1063/1.2982085
- (2008) J. Appl. Phys. , vol.104 , pp. 063714
- Chiam, S.Y.¹ Chim, W.K.² Ren, Y.³ Pi, C.⁴ Pan, J.S.⁵ Huan, A.C.H.⁶ Wang, S.J.⁷ Zhang, J.⁸

13
- 0003044819
- 0163-1829,. 10.1103/PhysRevB.37.6929
- K. Hirose and I. Ohdomari, Phys. Rev. B 0163-1829 37, 6929 (1988). 10.1103/PhysRevB.37.6929
- (1988) Phys. Rev. B , vol.37 , pp. 6929
- Hirose, K.¹ Ohdomari, I.²

14
- 4944232306
- 0361-5235,. 10.1007/s11664-004-0032-y
- Y. -J. Lin and C. -W. Hsu, J. Electron. Mater. 0361-5235 33, 1036 (2004). 10.1007/s11664-004-0032-y
- (2004) J. Electron. Mater. , vol.33 , pp. 1036
- Lin, Y.-J.¹ Hsu, C.-W.²

15
- 28544446074
- 0039-6028,. 10.1016/j.susc.2005.10.010
- Y. Y. Mi, S. J. Wang, Y. F. Dong, J. W. Chai, J. S. Pan, A. C. H. Huan, and C. K. Ong, Surf. Sci. 0039-6028 599, 255 (2005). 10.1016/j.susc.2005.10.010
- (2005) Surf. Sci. , vol.599 , pp. 255
- Mi, Y.Y.¹ Wang, S.J.² Dong, Y.F.³ Chai, J.W.⁴ Pan, J.S.⁵ Huan, A.C.H.⁶ Ong, C.K.⁷

16
- 33744939446
- Electronic properties of metal/MgO(001) interfaces
- DOI 10.1051/jp4:2006132012, Proceedings - ICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces
- Y. Lu, C. K. Assi, J. C. Le Breton, P. Turban, B. Lepine, P. Schieffer, and G. Jezequel, J. Phys. France 132, 63 (2006). 10.1051/jp4:2006132012 (Pubitemid 43843390)
- (2006) Journal De Physique. IV : JP , vol.132 , pp. 63-67
- Lu, Y.¹ Assi, C.K.² Le Breton, J.C.³ Turban, P.⁴ Lepine, B.⁵ Schieffer, P.⁶ Jezequel, G.⁷

17
- 0003708256
- edited by J. Chastain, J. Roger, and C. King (Physical Electronics, Eden Prairie, Minnesota).
- J. F. Moulder, W. F. Stickle, P. E. Sobol, and K. D. Bomben, Handbook of X-ray Photoelectron Spectroscopy: A Reference Book of Standard Spectra for Identification and Interpretation of XPS Data, edited by, J. Chastain, J. Roger, and, C. King, (Physical Electronics, Eden Prairie, Minnesota, 1995).
- (1995) Handbook of X-ray Photoelectron Spectroscopy: A Reference Book of Standard Spectra for Identification and Interpretation of XPS Data
- Moulder, J.F.¹ Stickle, W.F.² Sobol, P.E.³ Bomben, K.D.⁴

18
- 33646198048
- 0031-9007,. 10.1103/PhysRevLett.44.1620
- E. A. Kraut, R. W. Grant, J. R. Waldrop, and S. P. Kowalczyk, Phys. Rev. Lett. 0031-9007 44, 1620 (1980). 10.1103/PhysRevLett.44.1620
- (1980) Phys. Rev. Lett. , vol.44 , pp. 1620
- Kraut, E.A.¹ Grant, R.W.² Waldrop, J.R.³ Kowalczyk, S.P.⁴

19
- 0037115703
- 0021-8979, () 10.1063/1.1521517;, IEEE Electron Device Lett. 0741-3106 23, 342 (2002). 10.1109/LED.2002.1004229
- Y. -C. Yeo, T. -J. King, and C. Hu, J. Appl. Phys. 0021-8979 92, 7266 (2002) 10.1063/1.1521517; Y. -C. Yeo, P. Ranade, T. -J. King, and C. Hu, IEEE Electron Device Lett. 0741-3106 23, 342 (2002). 10.1109/LED.2002.1004229
- (2002) J. Appl. Phys. , vol.92 , pp. 7266
- Yeo, Y.-C.¹ King, T.-J.² Hu, C.³ Yeo, Y.-C.⁴ Ranade, P.⁵ King, T.-J.⁶ Hu, C.⁷

20
- 0001375510
- 1071-1023,. 10.1116/1.588947
- W. Mönch, J. Vac. Sci. Technol. B 1071-1023 14, 2985 (1996). 10.1116/1.588947
- (1996) J. Vac. Sci. Technol. B , vol.14 , pp. 2985
- Mönch, W.¹

21
- 0033690094
- 5 meta-stable phase
- DOI 10.1016/S0040-6090(99)01090-1
- T. Nonaka, G. Ohbayashi, Y. Toriumi, Y. Mori, and H. Hashimoto, Thin Solid Films 0040-6090 370, 258 (2000). 10.1016/S0040-6090(99)01090-1 (Pubitemid 30882921)
- (2000) Thin Solid Films , vol.370 , Issue.1 , pp. 258-261
- Nonaka, T.¹ Ohbayashi, G.² Toriumi, Y.³ Mori, Y.⁴ Hashimoto, H.⁵

22
- 0000984849
- 0021-8979,. 10.1063/1.1314323
- N. Yamada and T. Matsunaga, J. Appl. Phys. 0021-8979 88, 7020 (2000). 10.1063/1.1314323
- (2000) J. Appl. Phys. , vol.88 , pp. 7020
- Yamada, N.¹ Matsunaga, T.²

23
- 18844384191
- 0021-8979,. 10.1063/1.1884248
- B. S. Lee, J. R. Abelson, S. G. Bishop, D. -H. Kang, B. -K. Cheong, and K. -B. Kim, J. Appl. Phys. 0021-8979 97, 093509 (2005). 10.1063/1.1884248
- (2005) J. Appl. Phys. , vol.97 , pp. 093509
- Lee, B.S.¹ Abelson, J.R.² Bishop, S.G.³ Kang, D.-H.⁴ Cheong, B.-K.⁵ Kim, K.-B.⁶

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.