Influence of Bi doping upon the phase change characteristics of Ge 2Sb2Te5

Journal of Applied Physics

Volumn 96, Issue 10, 2004, Pages 5557-5562

  Wang, K ^a   Wamwangi, D ^a   Ziegler, S ^a   Steimer, C ^a   Wuttig, M ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ATOMIC FORCE MICROSCOPY; BISMUTH; CRYSTAL STRUCTURE; CRYSTALLIZATION; DOPING (ADDITIVES); ELECTRIC RESISTANCE; ELLIPSOMETRY; EVAPORATION; REFLECTOMETERS; STOICHIOMETRY; X RAY DIFFRACTION;

GRAZING INCIDENCE X-RAY DIFFRACTION (XRD); SHEET RESISTANCE; ULTRAFAST CRYSTALLIZATION; X-RAY REFLECTOMETRY (XRR);

GERMANIUM ALLOYS;

EID: 10044227469     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1803612     Document Type: Article

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