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Journal of Applied Physics

Volumn 105, Issue 6, 2009, Pages

Properties of p-n heterojunction diode based on Ge2Sb 2Te5 and its application for phase change random access memory

(7) Tang, Li a Zhou, Peng a Wan, Haijun a Jin, Gang a Chen, B A a Tang, Ting Ao a Lin, Yinyin a

a FUDAN UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

EQUILIBRIUM ENERGIES; HETEROJUNCTION DIODES; N-TYPE SILICONS; P TYPES; P-N HETEROJUNCTIONS; PHASE-CHANGE RANDOM ACCESS MEMORIES; POINT STRUCTURES; READ OPERATIONS; REVERSE CURRENTS;

AMORPHOUS SILICON; DIODES; ELECTRIC RECTIFIERS; GERMANIUM; PHASE CHANGE MEMORY; RANDOM ACCESS STORAGE; SEMICONDUCTOR DIODES; SILICON; SILICON WAFERS; TELLURIUM COMPOUNDS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 63749095917 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3055417 Document Type: Article

Times cited : (8)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.