Phase transition characteristics and device performance of Si-doped Ge 2Sb2Te5

Semiconductor Science and Technology

Volumn 23, Issue 10, 2008, Pages

  Park, Sung Jin ^a   Kim, In Soo ^a   Kim, Sang Kyun ^a   Yoon, Sung Min ^b   Yu, Byoung Gon ^b   Choi, Se Young ^a  

^a Yonsei University   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTALLINE MATERIALS; ELECTRIC RESISTANCE; GERMANIUM; PHASE CHANGE MEMORY; PHASE TRANSITIONS; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON; TELLURIUM COMPOUNDS; THICK FILMS; THIN FILMS;

CRYSTALLINE STATES; DEVICE APPLICATIONS; DEVICE PERFORMANCES; MAGNETRON COSPUTTERING SYSTEMS; POINT PROBE MEASUREMENTS; RESET CURRENTS; X-RAY PHOTOELECTRON SPECTROSCOPIES; XPS SPECTRUMS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 56349144753     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/23/10/105006     Document Type: Article

References (10)

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