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Volumn 94, Issue 6, 2009, Pages

Dependence of energy band offsets at Ge2Sb2Te 5 / SiO2 interface on nitrogen concentration

(8) Fang, Lina Wei Wei a Zheng, Zhang b Pan, Ji Sheng b Zhao, Rong c Li, Minghua c Shi, Luping c Chong, Tow Chong a,c Yeo, Yee Chia a

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

c DATA STORAGE INSTITUTE (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION BANDS; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; ELECTRONIC PROPERTIES; GERMANIUM; HEAT CONDUCTION; HETEROJUNCTIONS; NITROGEN; NONMETALS; PHASE CHANGE MATERIALS; PHASE INTERFACES; PHOTOELECTRON SPECTROSCOPY; SILICA; SILICON COMPOUNDS; TELLURIUM COMPOUNDS; VALENCE BANDS;

CONDUCTION BAND OFFSETS; CORE-LEVEL SPECTRUM; ENERGY BANDS; HIGH RESOLUTIONS; LINEAR DEPENDENCES; NITROGEN CONCENTRATIONS; NITROGEN CONTENTS; NITROGEN-DOPED; PHASE CHANGES; VALENCE BAND OFFSETS; VALENCE BAND SPECTRUM; X-RAY PHOTOELECTRON SPECTROSCOPIES;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 60449100840 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3079396 Document Type: Article

Times cited : (5)

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