Clarifying the origin of near-infrared electroluminescence peaks for nanocrystalline germanium in metal-insulator-silicon structures

Applied Physics Letters

Volumn 85, Issue 12, 2004, Pages 2349-2351

  Kan, E W H ^a   Chim, W K ^a   Lee, C H ^a   Choi, W K ^a   Ng, T H ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; LITHOGRAPHY; MISFET DEVICES; NANOSTRUCTURED MATERIALS; OXIDATION; RAMAN SPECTROSCOPY; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY;

BAND GAP; METAL-INSULATOR-SILICON STRUCTURES; QUANTUM CONFINEMENT EFFECT (QCE); RADIO-FREQUENCY SPUTTERING;

GERMANIUM;

EID: 7044245784     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1793348     Document Type: Article

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