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Volumn 94, Issue 17, 2009, Pages

Valence band energy in confined Si1-x Gex (0.28

b IMEC (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

GE CONCENTRATIONS; GE CONTENTS; INTERNAL PHOTOEMISSIONS; PURE SILICONS; TWO LAYERS;

ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON OXIDES;

VALENCE BANDS;

EID: 65449168392 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3125434 Document Type: Article

Times cited : (20)

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