Thermal stability of alumina thin films containing γ-Al 2 O 3 phase prepared by reactive magnetron sputtering

Applied Surface Science

Volumn 257, Issue 3, 2010, Pages 1058-1062

  Musil, J ^a,b   Blazek J ^a   Zeman, P ^a   Proksova S ^a   Sasek M ^a   Cerstvy R ^a  

^a UNIVERSITY OF WEST BOHEMIA   (Czech Republic)

^b INSTITUTE OF PHYSICS   (Czech Republic)

Author keywords

Annealing; Nanocrystalline material; Sputtering; Thermal stability

Indexed keywords

ALUMINA; ALUMINUM OXIDE; ANNEALING; FILM PREPARATION; MAGNETRON SPUTTERING; NANOCRYSTALLINE MATERIALS; NANOCRYSTALS; OPTICAL FILMS; SPUTTERING; THERMODYNAMIC STABILITY; X RAY DIFFRACTION;

ALUMINA THIN FILMS; NANOCRYSTALLINES; POST DEPOSITION ANNEALING; REACTIVE MAGNETRON SPUTTERING; TEMPERATURE REGIONS; THERMAL-ANNEALING; THERMO-GRAVIMETRIC; THERMODYNAMICALLY STABLE;

THIN FILMS;

EID: 77956614024     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.07.107     Document Type: Article

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