The influence of plasma power on the temperature-dependant conductivity and on the wet chemical etch rate of sputter-deposited alumina thin films

Surface and Coatings Technology

Volumn 203, Issue 19, 2009, Pages 2830-2834

  Fricke, S ^a,b   Friedberger, A ^b   Schmid, U ^c  

^a SAARLAND UNIVERSITY   (Germany)

^b AIRBUS GROUP INNOVATIONS   (Germany)

^c VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

Aluminum oxide; Conduction mechanism; Dielectric properties; Etching; Insulators; Sputtering

Indexed keywords

ALUMINA THIN FILMS; ALUMINUM OXIDE; BATH TEMPERATURES; CHARGED IONS; CONDUCTION MECHANISM; CURRENT BEHAVIORS; CURRENT-VOLTAGE MEASUREMENTS; DIELECTRIC LAYERS; ELECTRICAL INSULATIONS; ELECTRICAL PERFORMANCE; ETCH RATES; FILM DENSITIES; FILM TEMPERATURES; HIGH TEMPERATURE SENSORS; INSULATORS; MAGNETRON SPUTTER DEPOSITIONS; PLASMA LEVELS; PLASMA POWER; POOLE-FRENKEL; POOLE-FRENKEL BEHAVIORS; POST-DEPOSITION ANNEALING; SILICON SUBSTRATES; SINGLE-CRYSTALLINE; WET-CHEMICAL ETCH; WET-CHEMICAL ETCHINGS; X-RAY AMORPHOUS;

ACTIVATION ENERGY; ALUMINA; ALUMINUM; CERAMIC CAPACITORS; DIELECTRIC PROPERTIES; FILM THICKNESS; HIGH TEMPERATURE APPLICATIONS; PHOTORESISTS; PLASMA DEPOSITION; PLASMAS; REFRACTIVE INDEX; SEMICONDUCTING SILICON COMPOUNDS; SPUTTER DEPOSITION; THIN FILMS; WET ETCHING;

AMORPHOUS FILMS;

EID: 67349285885     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2008.12.030     Document Type: Article

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