Silicon carbonitride (SiCN) films by remote hydrogen microwave plasma CVD from tris(dimethylamino)silane as novel single-source precursor

Chemical Vapor Deposition

Volumn 16, Issue 7-9, 2010, Pages 211-215

  Wrobel, Aleksander M ^a   Blaszczyk Lezak, Iwona ^a   Uznanski, Pawel ^a   Glebocki, Bartosz ^a  

^a CENTRE OF MOLECULAR AND MACROMOLECULAR STUDIES   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL STRUCTURE; DIFFERENT SUBSTRATES; FILM SURFACES; MICROWAVE HYDROGEN PLASMAS; MICROWAVE PLASMA CVD; PEAK POSITION; SI-C-N FILMS; SILANE PRECURSOR; SILICON CARBO-NITRIDE; SINGLE-SOURCE PRECURSOR;

CARBON NITRIDE; HYDROGEN; SURFACE STRUCTURE;

CHEMICAL VAPOR DEPOSITION;

EID: 77956438859     PISSN: 09481907     EISSN: 15213862     Source Type: Journal    
DOI: 10.1002/cvde.201004287     Document Type: Article

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