Silicon carbonitride by remote microwave plasma CVD from organosilicon precursor: Growth mechanism and structure of resulting Si:C:N films

Applied Surface Science

Volumn 253, Issue 17, 2007, Pages 7211-7218

  Blaszczyk Lezak, I ^a   Wrobel, A M ^a   Kivitorma, M P M ^b   Vayrynen, I J ^b   Tracz, A ^a  

^a CENTRE OF MOLECULAR AND MACROMOLECULAR STUDIES   (Poland)

^b UNIVERSITY OF TURKU   (Finland)

Author keywords

Bis(dimethylamino)methylsilane precursor; Film chemical structure; Film surface morphology; Remote hydrogen plasma CVD; Silicon carbonitride film

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARBONITRIDING; CHEMICAL VAPOR DEPOSITION; CROSSLINKING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GROWTH RATE; PLASMA DEPOSITION; SILICON; SYNTHESIS (CHEMICAL); X RAY PHOTOELECTRON SPECTROSCOPY;

BIS(DIMETHYLAMINO)METHYLSILANE PRECURSOR; FILM CHEMICAL STRUCTURE; FILM SURFACE MORPHOLOGY; ORGANOSILICON PRECURSOR; REMOTE HYDROGEN PLASMA CVD; SILICON CARBONITRIDE;

THIN FILMS;

EID: 34248998557     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2007.02.193     Document Type: Article

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