Remote hydrogen microwave plasma chemical vapor deposition of silicon carbonitride films from a (dimethylamino)dimethylsilane precursor: Characterization of the process, chemical structure, and surface morphology of the films

Diamond and Related Materials

Volumn 15, Issue 9, 2006, Pages 1484-1491

  Blaszczyk Lezak, I ^a   Wrobel, A M ^a   Kivitorma, M P M ^b   Vayrynen, I J ^b   Aoki, T ^c  

^a CENTRE OF MOLECULAR AND MACROMOLECULAR STUDIES   (Poland)

^b UNIVERSITY OF TURKU   (Finland)

^c SHIZUOKA UNIVERSITY   (Japan)

Author keywords

(Dimethylamino)dimethylsilane precursor; Film structure; Film surface morphology; Remote hydrogen plasma CVD; Silicon carbonitride film

Indexed keywords

CARBON NITRIDE; HYDROGEN; HYDROGENATION; MICROWAVES; MORPHOLOGY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON;

(DIMETHYLAMINO)DIMETHYLSILANE PRECURSOR; FILM STRUCTURES; FILM SURFACE MORPHOLOGY; REMOTE HYDROGEN PLASMA CVD; SILICON CARBONITRIDE FILM;

SUPERCONDUCTING FILMS;

EID: 33746605606     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2005.11.011     Document Type: Article

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