Strain-effect for controlled growth mode and well-ordered structure of quaterrylene thin films

Journal of Chemical Physics

Volumn 133, Issue 3, 2010, Pages

  Hayakawa, Ryoma ^a   Turak, Ayse ^b   Zhang, Xuena ^b   Hiroshiba, Nobuya ^a   Dosch, Helmut ^b   Chikyow, Toyohiro ^a   Wakayama, Yutaka ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CONTROLLED GROWTH; FILM STRAIN; GROWTH PROCESS; LATTICE STRAIN; LAYER-BY-LAYERS; MICRO-STRAIN; MOLECULAR ALIGNMENT; MOLECULAR-SUBSTRATE INTERACTIONS; MOSAIC STRUCTURE; OCTADECYLTRICHLOROSILANE; SAMS; STRAIN-FREE; STRANSKI-KRASTANOV MODE; SURFACE MODIFICATION; THREE-DIMENSIONAL ISLANDS; WELL-ORDERED STRUCTURE; WETTING LAYER; X-RAY DIFFRACTION TECHNIQUES;

CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); FILM GROWTH; PROCESS CONTROL; SELF ASSEMBLED MONOLAYERS; SILICON COMPOUNDS; STRAIN; STRUCTURAL ANALYSIS; SURFACE DEFECTS; THIN FILMS; WETTING; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

SURFACE STRUCTURE;

EID: 77956251094     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3456733     Document Type: Article

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