Transition from layer-by-layer to rapid roughening in the growth of DIP on SiO2

Surface Science

Volumn 601, Issue 12, 2007, Pages 2420-2425

  Zhang, X N ^a   Barrena, E ^a,b   de Oteyza, D G ^a   Dosch, H ^a,b  

^a MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

^b UNIVERSITY OF STUTTGART   (Germany)

Author keywords

In situ growth; Organic; Strain; Structure; X ray diffraction

Indexed keywords

ATOMIC FORCE MICROSCOPY; MONOLAYERS; PHASE TRANSITIONS; SILICA; SINGLE CRYSTALS; STRAIN RELAXATION; X RAY DIFFRACTION ANALYSIS;

CRITICAL THICKNESS; DIINDENOPERYLENE (DIP); GRAZING INCIDENCE X-RAY DIFFRACTION (GIXD); ROUGHENING;

SEMICONDUCTING ORGANIC COMPOUNDS;

EID: 34249889896     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2007.04.051     Document Type: Article

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