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Volumn 58, Issue 24, 1998, Pages 16491-16498

Electronic structure of a heterostructure of an alkylsiloxane self-assembled monolayer on silicon

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EID: 0001019156     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.58.16491     Document Type: Article
Times cited : (64)

References (42)
  • 15
    • 0001839574 scopus 로고
    • We used the extrapolation technique of Zisman [W. A. Zisman, Adv. Chem. Ser. 43, 1 (1964)] in which the contact angles for sessile drops of homologous apolar liquids are plotted as a function of their liquid-vapor interfacial energy (Formula presented) To measure the contact angles, we used an optical method described in detail elsewhere (Ref. 6). We also used a remote-computer controlled goniometer system (DIGIDROP by GBX, France) to measure water contact angles greater than 90° on silanized surfaces, values for which the above method cannot be used. Advancing and receding angles were measured using a tilted sample holder table. All measurements (both techniques) were made in ambient atmosphere and at room temperature.
    • (1964) Adv. Chem. Ser. , vol.43 , pp. 1
    • Zisman, W.1
  • 18
    • 27944441432 scopus 로고    scopus 로고
    • J. Collet, Ph.D. thesis, University of Lille, 1997
    • D. Vuillaume, in Amorphous and Crystalline Insulating Thin Films, edited by W. L. Warren, R. A. Devine, M. Matsumura, S. Cristoloveanu, Y. Homma, and J. Kanicki, MRS Symposia Proceedings No. 446 (Materials Research Society, Pittsburgh, 1997), p. 79;J. Collet, Ph.D. thesis, University of Lille, 1997.
    • (1997) Amorphous and Crystalline Insulating Thin Films , pp. 79
    • Vuillaume, D.1
  • 23
    • 36549091508 scopus 로고
    • see also Ref. 1(b) and references therein
    • S. Horiguchi and H. Yoshino, J. Appl. Phys. 58, 1597 (1985); see also Ref. 1(b) and references therein.
    • (1985) J. Appl. Phys. , vol.58 , pp. 1597
    • Horiguchi, S.1    Yoshino, H.2
  • 24
    • 0029196782 scopus 로고
    • EELS experiments were performed with a homemade system using a cylindrical mirror analysis (CMA). The samples are bombarded with a primary electrons at (Formula presented) normal incidence, and in a standard single-pass CMA pulse counting mode. We applied an EELS procedure describe in P. Poveda and A. Glachant, Surf. Sci. 323, 258 (1995).
    • (1995) Surf. Sci. , vol.323 , pp. 258
    • Poveda, P.1    Glachant, A.2
  • 29
    • 0001653057 scopus 로고
    • A. Karpfen, J. Chem. Phys. 75, 238 (1981), and references therein for a detailed review of theoretical results. See also Ref. 20 for quoted values.
    • (1981) J. Chem. Phys. , vol.75 , pp. 238
    • Karpfen, A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.