Manufacture of microfluidic glass chips by deep plasma etching, femtosecond laser ablation, and anodic bonding

Microsystem Technologies

Volumn 16, Issue 8-9, 2010, Pages 1485-1493

  Queste, S ^a   Salut, R ^a   Clatot, S ^a   Rauch, J Y ^a   Khan Malek, Chantal G ^a  

^a FEMTO ST INSTITUTE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPIC STRUCTURE; ANODIC BONDING; AVERAGE POWER; CHEMICAL INERTNESS; CONDUCTIVE INTERLAYERS; CONDUCTIVE LAYER; COVER PLATE; DEEP PLASMA ETCHING; ELECTROPLATED NI; ETCH RATES; ETCHED STRUCTURES; FEMTOSECOND LASER ABLATION; FLUORINE PLASMA; FUNCTIONALISATION; GLASS ANODIC BONDING; GLASS CHIPS; GLASS SUBSTRATES; HERMETIC SEALING; HIGH ASPECT RATIO; INDUCTIVELY COUPLED-PLASMA REACTIVE ION ETCHING; INDUCTIVELY-COUPLED; LOW TEMPERATURES; MICRO FLUIDIC APPLICATIONS; MICRO-FLUIDIC DEVICES; MICROFLUIDIC COMPONENTS; NANO SCALE; NOVEL PROCESS; OPTICAL TRANSPARENCY; PULSE DURATIONS; REPETITION RATE; SURFACE MODIFICATION; TI: SAPPHIRE LASER;

ASPECT RATIO; CHEMICAL STABILITY; ELECTRIC INSULATION; ELECTRIC RESISTANCE; ELECTROMAGNETIC INDUCTION; ELECTRON BEAM LITHOGRAPHY; FLUORINE; GLASS BONDING; GLASS LASERS; INDUCTIVELY COUPLED PLASMA; LASER ABLATION; MECHANICAL STABILITY; MICROFLUIDICS; PLASMA ETCHING; PULSE REPETITION RATE; PULSED LASER APPLICATIONS; REACTIVE ION ETCHING; SUBSTRATES; ULTRASHORT PULSES;

BOROSILICATE GLASS;

EID: 77955852935     PISSN: 09467076     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00542-010-1020-1     Document Type: Conference Paper

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