Deep reactive ion etching of borosilicate glass using an anodically bonded silicon wafer as an etching mask

Journal of Micromechanics and Microengineering

Volumn 16, Issue 5, 2006, Pages 1051-1056

  Akashi, T ^a   Yoshimura, Y ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANTENNAS; CHEMICAL BONDS; DRY ETCHING; INDUCTIVELY COUPLED PLASMA; REACTIVE ION ETCHING; SILICON WAFERS;

BOROSILICATE GLASS WAFER; DEEP REACTIVE ION ETCHING; ETCHING MASK;

BOROSILICATE GLASS;

EID: 33744461560     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/16/5/024     Document Type: Article

References (8)

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