Photoluminescence studies of ZnO thin films grown by atomic layer epitaxy

Journal of Luminescence

Volumn 109, Issue 3-4, 2004, Pages 181-185

  Lim, Jongmin ^a   Shin, Kyoungchul ^a   Kim, Hyoun Woo ^a   Lee, Chongmu ^a  

^a Inha University   (South Korea)

Author keywords

Annealing; Atomic Layer epitaxy; Photoluminescence; ZnO

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; DEPOSITION; EPITAXIAL GROWTH; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTOR MATERIALS; SOLAR CELLS; THERMAL EFFECTS; ZINC OXIDE;

ATOMIC LAYER DEPOSITION (ALD); ATOMIC LAYER EPITAXY (ALE); FURNACE ANNEALING (FA); RAPID THERMAL ANNEALING (RTA);

THIN FILMS;

EID: 3843063449     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-2313(04)00142-5     Document Type: Article

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