AlN waveguide with GaN/AlN quantum wells for all-optical switch utilizing intersubband transition

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 46, Issue 12-16, 2007, Pages

  Kumtornkittikul, Chaiyasit ^a,b,c   Shimizu, Toshimasa ^a,b,c   Iizuka, Norio ^d   Suzuki, Nobuo ^d   Sugiyama, Masakazu ^b,c   Nakano, Yoshiaki ^a,b,c  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^d TOSHIBA CORPORATION   (Japan)

Author keywords

All optical switch; AlN waveguide; GaN AIN; High mesa waveguide; Intersubband transition; Metalorganic vapor phase epitaxy; Molecular beam epitaxy; Supercontinuum light

Indexed keywords

ALUMINUM COMPOUNDS; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR QUANTUM WELLS;

HIGH-MESA WAVEGUIDE; INTERSUBBAND TRANSITION; SUPERCONTINUUM LIGHT;

OPTICAL WAVEGUIDES;

EID: 34547858496     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.L352     Document Type: Article

References (28)

1. J. Faist, F. Capasso, D. L. Sivco, C. Sirtori, A. L. Hutchinson, and A. Y. Cho: Science 264 (1994) 553.
2. B. F. Levine: J. Appl. Phys. 74 (1993) R1.
3. H. Rücker, E. Molinari, and P. Lugli: Phys. Rev. B 45 (1992) 6747.
4. N. Suzuki and N. Iizuka: Jpn. J. Appl. Phys. 36 (1997) L1006.
5. T. Asano and S. Noda: Jpn. J. Appl. Phys. 37 (1998) 6020.
6. N. Iizuka, K. Kaneko, N. Suzuki, T. Asano, S. Noda, and O. Wada: Appl. Phys. Lett. 77 (2000) 648.
7. A. Liu, S.-L. Chuang, and C. Z. Ning: Appl. Phys. Lett. 76 (2000) 333.
8. A. Neogi, H. Yoshida, T. Mozume, and O. Wada: J. Appl. Phys. 85 (1999) 3352.
9. T. Asano, M. Tamura, S. Yoshizawa, and S. Noda: Appl. Phys. Lett. 77 (2000) 19.
10. H. Yoshida, T. Mozume, A. Neogi, and O. Wada: Electron. Lett. 35 (1999) 1103.
11. J. H. Smet, L. H. Peng, Y. Hirayama, and C. G. Fonstad: Appl. Phys. Lett. 64 (1994) 986.
12. A. Neogi, T. Mozume, H. Yoshida, and O. Wada: IEEE Photonics Technol. Lett. 11 (1999) 632.
13. R. Akimoto, Y. Kinpara, K. Akita, F. Sasaki, and S. Kobayashi: Appl. Phys. Lett. 78 (2001) 580.
14. C. Gmachl, H. M. Ng, S.-N. G. Chu, and A. Y. Cho: Appl. Phys. Lett. 77 (2000) 3722.
15. K. Kishino, A. Kikuchi, H. Kanazawa, and T. Tachibana: Appl. Phys. Lett. 81 (2002) 1234.
16. N. Iizuka, K. Kaneko, and N. Suzuki: Appl. Phys. Lett. 81 (2002) 1803.
17. J. D. Heber, C. Gmachl, H. M. Ng, and A. Y. Cho: Appl. Phys. Lett. 81 (2002) 1237.
18. N. Iizuka, K. Kaneko, and N. Suzuki: Electron. Lett. 40 (2004) 962.
19. N. Iizuka, K. Kaneko, and N. Suzuki: Opt. Express 13 (2005) 3835.
20. N. Iizuka, N. Suzuki, and K. Kaneko: IEEE J. Quantum. Electron. 42 (2006) 765.
21. N. Suzuki and N. Iizuka: Jpn. J. Appl. Phys. 38 (1999) L363.
22. Y. Takushima, K. Yasunaka, Y. Ozeki, and K. Kikuchi: Electron. Lett. 41 (2005) 399.
23. M. J. Kane, M. T. Emeny, N. Apsley, C. R. Whitehouse, and D. Lee: Semicond. Sci. Technol. 3 (1988) 722.
24. N. Iizuka, N. Suzuki, and K. Kaneko: J. Appl. Phys. 99 (2006) 093107.
25. N. Suzuki, N. Iizuka, and K. Kaneko: Jpn. J. Appl. Phys. 42 (2003) 132.
26. C. Kim, I. K. Robinson, J. Myoung, K. Shim, M.-C. Yoo, and K. Kim: Appl. Phys. Lett. 69 (1996) 2358.
27. K. Akita, R. Akimoto, T. Hasama, H. Ishikawa, and Y. Takanashi: Electron. Lett. 42 (2006) 1352.
28. D. N. Maywar, Y. Nakano, and G. P. Agrawal: IEEE Photonics Technol. Lett. 12 (2000) 858.