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Volumn 54, Issue 11, 2010, Pages 1246-1256

Reconfigurable Special Test Circuit of physics-based IGBT models parameter extraction

Author keywords

Electrical measurements; IGBT model; Parameter extraction; Special Test Circuit

Indexed keywords

DEVICE PHYSICS; ELECTRICAL MEASUREMENT; FREQUENCY RANGES; IGBT MODELS; PHYSICS-BASED; PHYSICS-BASED MODELS; POWER ELECTRONIC DEVICES; POWER SEMICONDUCTOR DEVICES; RE-CONFIGURABLE; SIMULATION SOFTWARE; STRUCTURAL PARAMETER; SWITCHING LOSS; TEST CIRCUIT; TEST SETUPS;

EID: 77955653803     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.06.019     Document Type: Article
Times cited : (17)

References (42)
  • 2
    • 51549086728 scopus 로고    scopus 로고
    • Temperature protection of frequency converter based on dynamic thermal model of IGBT module
    • A.B. Vinogradov, A.N. Sibirtsev, and I.Yu. Kolodin Temperature protection of frequency converter based on dynamic thermal model of IGBT module J Russ Electr Eng 79 6 2008 293 302
    • (2008) J Russ Electr Eng , vol.79 , Issue.6 , pp. 293-302
    • Vinogradov, A.B.1    Sibirtsev, A.N.2    Kolodin, I.Yu.3
  • 4
    • 55049113534 scopus 로고    scopus 로고
    • A new approach for physical-based modeling of bipolar power semiconductor devices
    • R. Chibante, A. Araújo, and A. Carvalho A new approach for physical-based modeling of bipolar power semiconductor devices Solid-State Electron 52 11 2008 1766 1772
    • (2008) Solid-State Electron , vol.52 , Issue.11 , pp. 1766-1772
    • Chibante, R.1    Araújo, A.2    Carvalho, A.3
  • 6
    • 0034462416 scopus 로고    scopus 로고
    • Physics-based power device models in SABER - Implementation issues
    • Kolessar R, Nee HP. Physics-based power device models in SABER - Implementation issues. In: IEEE COMPEL conf rec; 2000. p. 19-23.
    • (2000) IEEE COMPEL Conf Rec , pp. 19-23
    • Kolessar, R.1    Nee, H.P.2
  • 7
    • 9644260574 scopus 로고    scopus 로고
    • Non-destructive parameters extraction for IGBT spice model and compared with measurements
    • S.C. Yuan Non-destructive parameters extraction for IGBT spice model and compared with measurements Solid-State Electron 49 1 2005 123 129
    • (2005) Solid-State Electron , vol.49 , Issue.1 , pp. 123-129
    • Yuan, S.C.1
  • 8
    • 0030290152 scopus 로고    scopus 로고
    • Behavioral modeling of the IGBT using the Hammerstein configuration
    • J.T. Hsu, and K.D. Ngo Behavioral modeling of the IGBT using the Hammerstein configuration IEEE Trans Power Electron 11 1996 746 754
    • (1996) IEEE Trans Power Electron , vol.11 , pp. 746-754
    • Hsu, J.T.1    Ngo, K.D.2
  • 9
    • 0032794993 scopus 로고    scopus 로고
    • A new analytical IGBT model with improved electrical characteristic
    • K. Sheng, S.J. Finney, and B.W. Williams A new analytical IGBT model with improved electrical characteristic IEEE Trans Power Electron 14 1999 98 107
    • (1999) IEEE Trans Power Electron , vol.14 , pp. 98-107
    • Sheng, K.1    Finney, S.J.2    Williams, B.W.3
  • 15
    • 0028317906 scopus 로고
    • Insulated gate bipolar transistor (IGBT) modeling using IG-Spice
    • C. Mitter, A.R. Hefner, D. Chen, and F.C. Lee Insulated gate bipolar transistor (IGBT) modeling using IG-Spice IEEE Trans Ind Appl IA-30 1994 24 33
    • (1994) IEEE Trans Ind Appl , vol.30 , pp. 24-33
    • Mitter, C.1    Hefner, A.R.2    Chen, D.3    Lee, F.C.4
  • 16
    • 0028497396 scopus 로고
    • An experimental verified IGBT model implemented in the SABER circuit simulator
    • A.R. Hefner, and D.M. Diebolt An experimental verified IGBT model implemented in the SABER circuit simulator IEEE Trans Power Electron 9 1994 532 542
    • (1994) IEEE Trans Power Electron , vol.9 , pp. 532-542
    • Hefner, A.R.1    Diebolt, D.M.2
  • 17
    • 29144505545 scopus 로고
    • An analytical model for steady-state and transient characteristics of power insulated gate bipolar transistor
    • A.R. Hefner, and D.L. Blackburn An analytical model for steady-state and transient characteristics of power insulated gate bipolar transistor Solid-State Electron 31 1988 1513 1532
    • (1988) Solid-State Electron , vol.31 , pp. 1513-1532
    • Hefner, A.R.1    Blackburn, D.L.2
  • 18
    • 0029267581 scopus 로고
    • Modeling buffer layer IGBTs for circuit simulation
    • A.R. Hefner Modeling buffer layer IGBTs for circuit simulation IEEE Trans Power Electron 10 1995 111 123
    • (1995) IEEE Trans Power Electron , vol.10 , pp. 111-123
    • Hefner, A.R.1
  • 19
    • 0031335572 scopus 로고    scopus 로고
    • Parameter extraction methodology and validation for an electro-thermal physics-based NPT IGBT model
    • Sigg J, Turkes P, Kraus R. parameter extraction methodology and validation for an electro-thermal physics-based NPT IGBT model. In: IEEE IAS conf rec; 1997. p. 1166-73.
    • (1997) IEEE IAS Conf Rec. , pp. 1166-1173
    • Sigg, J.1    Turkes, P.2    Kraus, R.3
  • 22
    • 0036445926 scopus 로고    scopus 로고
    • An improved lumped-charge model and parameter extraction approach of PiN diodes
    • Yuan Y, Qian Z. An improved lumped-charge model and parameter extraction approach of PiN diodes. In: IEEE PESC conf rec; 2002. p. 1301-4.
    • (2002) IEEE PESC Conf Rec , pp. 1301-1304
    • Yuan, Y.1    Qian, Z.2
  • 23
    • 0034459168 scopus 로고    scopus 로고
    • Automated parameter extraction software for advanced IGBT modeling
    • Hefner AR Jr, Bouché S. Automated parameter extraction software for advanced IGBT modeling. In: IEEE COMPEL conf rec; 2000. p. 10-8.
    • (2000) IEEE COMPEL Conf Rec , pp. 10-18
    • Hefner Jr., A.R.1    Bouché, S.2
  • 24
    • 0036445081 scopus 로고    scopus 로고
    • Parameter extraction sequence for silicon carbide schottky, merged PiN schottky, and PiN power diode models
    • McNutt TR, Hefner AR, Mantooth HA, Duliere JL, Berning DW. Parameter extraction sequence for silicon carbide schottky, merged PiN schottky, and PiN power diode models. In: IEEE PESC conf rec; 2002. p. 1269-76.
    • (2002) IEEE PESC Conf Rec , pp. 1269-1276
    • McNutt, T.R.1    Hefner, A.R.2    Mantooth, H.A.3    Duliere, J.L.4    Berning, D.W.5
  • 25
    • 0031376569 scopus 로고    scopus 로고
    • Improved PiN diode circuit model with automatic parameter extraction technique
    • A. Strollo, and E. Napoli Improved PiN diode circuit model with automatic parameter extraction technique IEE Proc Circuits Dev Syst 144 1997 329 334
    • (1997) IEE Proc Circuits Dev Syst , vol.144 , pp. 329-334
    • Strollo, A.1    Napoli, E.2
  • 28
    • 33749654403 scopus 로고    scopus 로고
    • A simple and efficient parameter extraction procedure for physics based IGBT models
    • Chibante R, Araujo A, Carvalho A. A simple and efficient parameter extraction procedure for physics based IGBT models. In: EPE PEMC conf rec; 2004. p. 1-9.
    • (2004) EPE PEMC Conf Rec , pp. 1-9
    • Chibante, R.1    Araujo, A.2    Carvalho, A.3
  • 29
    • 0030150172 scopus 로고    scopus 로고
    • Modeling and characterization of the reverse recovery of a high-power GaAs Schottky diode
    • P. Pendharkar, C. Winterhalter, and K. Shenai Modeling and characterization of the reverse recovery of a high-power GaAs Schottky diode IEEE Trans Electron Dev ED-43 1996 685 690
    • (1996) IEEE Trans Electron Dev , vol.43 , pp. 685-690
    • Pendharkar, P.1    Winterhalter, C.2    Shenai, K.3
  • 30
    • 0011880595 scopus 로고    scopus 로고
    • A punch-through IGBT model using a simple technological parameters extraction method for two-dimensional physical simulation
    • Azzopardi S. Trivedi M, Zardini C, Shenai K. A punch-through IGBT model using a simple technological parameters extraction method for two-dimensional physical simulation. In: EPE conf rec; 1999.
    • (1999) EPE Conf Rec
    • Azzopardi, S.1    Trivedi, M.2    Zardini, C.3    Shenai, K.4
  • 31
    • 0034226313 scopus 로고    scopus 로고
    • Parasitic extraction methodology for insulated gate bipolar transistors
    • M. Trivedi, and K. Shenai Parasitic extraction methodology for insulated gate bipolar transistors IEEE Trans Power Electron 15 2000 799 804
    • (2000) IEEE Trans Power Electron , vol.15 , pp. 799-804
    • Trivedi, M.1    Shenai, K.2
  • 32
    • 0030086253 scopus 로고    scopus 로고
    • Parasitic series resistance-independent method for device model parameter extraction
    • F. Sanchez, A. Conde, and J. Liou Parasitic series resistance-independent method for device model parameter extraction IEE Proc Circuits Dev Syst 143 1996 68 70
    • (1996) IEE Proc Circuits Dev Syst , vol.143 , pp. 68-70
    • Sanchez, F.1    Conde, A.2    Liou, J.3
  • 33
    • 0034829437 scopus 로고    scopus 로고
    • A robust parameter extraction method for diode with series resistance
    • Wong H, Lam WH. A robust parameter extraction method for diode with series resistance. In: IEEE EDM conf rec; 2001. p. 38-41.
    • (2001) IEEE EDM Conf Rec , pp. 38-41
    • Wong, H.1    Lam, W.H.2
  • 34
    • 0036444723 scopus 로고    scopus 로고
    • Parameter extraction for the Pspice model of the IGBT by electrical measurements
    • Claudio A, Cotorogea M, Rodríguez M.A. Parameter extraction for the Pspice model of the IGBT by electrical measurements. In: IEEE PESC conf rec; 2002. p. 1295-300.
    • (2002) IEEE PESC Conf Rec , pp. 1295-1300
    • Claudio, A.1    Cotorogea, M.2    Rodríguez, M.A.3
  • 35
    • 77955658879 scopus 로고    scopus 로고
    • Parameter extraction method for the Pspice model of the PT- and NPTt-IGBT's by electrical measurements
    • Cotorogea M, Claudio A, Rodriguez MA. Parameter extraction method for the Pspice model of the PT- and NPTt-IGBT's by electrical measurements. In: IEEE CIEP conf rec; 2002. p. 101-6.
    • (2002) IEEE CIEP Conf Rec , pp. 101-106
    • Cotorogea, M.1    Claudio, A.2    Rodriguez, M.A.3
  • 37
    • 0029758552 scopus 로고    scopus 로고
    • The behaviour of homogeneous NPT-IGBTs at hard and soft switching
    • M. Cotorogea, T. Reimann, and S. Bernet The behaviour of homogeneous NPT-IGBTs at hard and soft switching EPE J 5 1996 23 31
    • (1996) EPE J , vol.5 , pp. 23-31
    • Cotorogea, M.1    Reimann, T.2    Bernet, S.3
  • 39
    • 33644910694 scopus 로고    scopus 로고
    • Two-step parameter extraction procedure with formal optimization for physics-based circuit simulator IGBT and PiN diode models
    • A.T. Bryant, X. Kang, E. Santi, P.R. Palmer, and J.L. Hudgins Two-step parameter extraction procedure with formal optimization for physics-based circuit simulator IGBT and PiN diode models IEEE Trans Power Electron 21 2 2006 295 309
    • (2006) IEEE Trans Power Electron , vol.21 , Issue.2 , pp. 295-309
    • Bryant, A.T.1    Kang, X.2    Santi, E.3    Palmer, P.R.4    Hudgins, J.L.5
  • 42
    • 4344645834 scopus 로고    scopus 로고
    • Advanced SPICE modeling of large power IGBT modules
    • R. Azar Advanced SPICE modeling of large power IGBT modules IEEE Trans Ind Appl 40 3 2004 710 716
    • (2004) IEEE Trans Ind Appl , vol.40 , Issue.3 , pp. 710-716
    • Azar, R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.