Behavioral modeling of the IGBT using the Hammerstein configuration

IEEE Transactions on Power Electronics

Volumn 11, Issue 6, 1996, Pages 746-754

  Hsu, Jia Tzer ^b   Ngo, Khai D T ^a,b  

^a IEEE

^b University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUIT LAYOUT; LEAST SQUARES APPROXIMATIONS; PARAMETER ESTIMATION; SEMICONDUCTOR DEVICE MODELS;

HAMMERSTEIN MODEL CONFIGURATION; INSULATED GATE BIPOLAR TRANSISTOR (IGBT); PHYSICS BASED MODELS; SOFT SWITCHED CONVERTERS;

BIPOLAR TRANSISTORS;

EID: 0030290152     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/63.542037     Document Type: Article

References (14)

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