Parameter extraction for a power diode circuit simulator model including temperature dependent effects

Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

Volumn 1, Issue , 2002, Pages 452-458

  Kang, X ^a   Caiafa, A ^a   Santi, E ^a   Hudgins, J L ^a   Palmer, P R ^a  

^a University of South Carolina   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; PARAMETER ESTIMATION; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DIODES; THERMAL EFFECTS;

POWER DIODES;

POWER ELECTRONICS;

EID: 0036072956     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)

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3. Optimization of recombination levels.and their capture cross-section in power rectifiers and thyristors
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14. Avalanche breakdown of diffused silicon p-n junctions
15. Avalanche breakdown voltages of abrupt and linearly graded p-n junctions in Ge, Si, GaAs, and GAP