A FEM punch-through IGBT model using an efficient parameter extraction method

IECON Proceedings (Industrial Electronics Conference)

Volumn 2005, Issue , 2005, Pages 679-684

  Chibante, Rui ^a   Araújo, Armando ^b   Carvalho, Adriano ^b  

^a CENTER FOR DRUG EVALUATION AND RESEARCH   (United States)

^b UNIVERSITY OF PORTO   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIPOLAR DIFFUSION EQUATION (ADE); FINITE ELEMENT PHYSICS; PARAMETER EXTRACTION;

ALGORITHMS; COMPUTER SIMULATION; DIFFUSION; FINITE ELEMENT METHOD; OPTIMIZATION;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 33749664128     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IECON.2005.1568986     Document Type: Conference Paper

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