A new approach for physical-based modelling of bipolar power semiconductor devices

Solid-State Electronics

Volumn 52, Issue 11, 2008, Pages 1766-1772

  Chibante, R ^a   Araujo A ^b   Carvalho, A ^b  

^a Institute of Engineering of Oporto   (Portugal)

^b UNIVERSITY OF PORTO   (Portugal)

Author keywords

Ambipolar diffusion equation; Device simulation; Finite element method; Modelling; SPICE

Indexed keywords

ACTIVE FILTERS; BIPOLAR TRANSISTORS; CHARGE CARRIERS; CIRCUIT SIMULATION; ELECTRIC CONDUCTIVITY; FINITE ELEMENT METHOD; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); MARINE BIOLOGY; POWER ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR SWITCHES; SIMULATORS; SPICE; TRANSISTORS; TUNNEL DIODES;

ACCURATE; AMBIPOLAR DIFFUSION EQUATION; AMBIPOLAR DIFFUSIONS; APPROXIMATE SOLUTIONS; BIPOLAR; BIPOLAR JUNCTION TRANSISTORS; CARRIER DISTRIBUTIONS; CIRCUIT SIMULATORS; CLASSICAL METHODS; DEVICE SIMULATION; EXECUTION TIMES; FINITE ELEMENTS; HYBRID APPROACHES; INSULATED GATE BIPOLAR TRANSISTORS; MODELLING; MODELLING AND SIMULATIONS; NEW APPROACHES; PHYSICS-BASED; POWER SEMICONDUCTOR DEVICES; POWER SEMICONDUCTOR MODELS; SIMULATED RESULTS; VARIATIONAL FORMULATIONS;

BIPOLAR SEMICONDUCTOR DEVICES;

EID: 55049113534     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.07.006     Document Type: Article

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