On-state analytical modeling of IGBTs with local lifetime control

IEEE Transactions on Power Electronics

Volumn 17, Issue 5, 2002, Pages 815-823

  Yuan, Xiaolu ^b   Udrea, Florin ^a,b   Coulbeck, Lee ^c   Waind, Peter ^c   Amaratunga, Gehan ^a,b  

^a IEEE

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c DYNEX SEMICONDUCTOR LTD   (United Kingdom)

Author keywords

Analytical model; Bipolar transistor; IGBT; Local lifetime control; Trench

Indexed keywords

ANODES; BOUNDARY CONDITIONS; CARRIER CONCENTRATION; CATHODES; COMPUTER SIMULATION; ELECTRON IRRADIATION; ELECTRON TRANSPORT PROPERTIES; ION IMPLANTATION; MATHEMATICAL MODELS; MONTE CARLO METHODS; RELIABILITY;

ANODE JUNCTION; LOCAL LIFETIME CONTROL; SOFTWARE PACKAGE MEDICI; TRENCH;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 0036709473     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2002.802177     Document Type: Article

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