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Volumn 15, Issue 4, 2000, Pages 799-804

Parasitic extraction methodology for insulated gate bipolar transistors

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; ELECTRIC IMPEDANCE MEASUREMENT; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; SEMICONDUCTOR DIODES; SWITCHING NETWORKS; TWO DIMENSIONAL;

EID: 0034226313     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/63.849051     Document Type: Article
Times cited : (21)

References (15)
  • 2
    • 0031621053 scopus 로고    scopus 로고
    • Analysis of IPM current oscillation under short circuit condition
    • M. Takei, Y. Minoya, N. Kumagai, and K. Sakurai, "Analysis of IPM current oscillation under short circuit condition," in Proc. IEEE ISPSD, 1997, pp. 89-93.
    • (1997) Proc. IEEE ISPSD , pp. 89-93
    • Takei, M.1    Minoya, Y.2    Kumagai, N.3    Sakurai, K.4
  • 3
    • 33749940960 scopus 로고    scopus 로고
    • A new low inductance IGBT module package
    • E. Motto, "A new low inductance IGBT module package," in Proc. APET, 1996, pp. 51-56.
    • (1996) Proc. APET , pp. 51-56
    • Motto, E.1
  • 4
  • 8
    • 0031638468 scopus 로고    scopus 로고
    • Characterization of power electronics system interconnect parasitics using time domain reflectometry
    • H. Zhu, A. Hefner, and J.-S. Lai, "Characterization of power electronics system interconnect parasitics using time domain reflectometry," in Proc. IEEE Power Elec. Spec. Conf. (PESC), 1998, pp. 1937-1943.
    • (1998) Proc. IEEE Power Elec. Spec. Conf. (PESC) , pp. 1937-1943
    • Zhu, H.1    Hefner, A.2    Lai, J.-S.3
  • 10
    • 0032141248 scopus 로고    scopus 로고
    • Zero-voltage switching behavior of punch-through and non punch-through IGBTs
    • Aug.
    • S. Pendharkar and K. Shenai, "Zero-voltage switching behavior of punch-through and non punch-through IGBTs," IEEE Trans. Electron Devices, vol. 45, pp. 1826-1835, Aug. 1998.
    • (1998) IEEE Trans. Electron Devices , vol.45 , pp. 1826-1835
    • Pendharkar, S.1    Shenai, K.2
  • 11
    • 29144505545 scopus 로고
    • An analytical model for the steady-state and transient characteristics of the power insulated-gate bipolar transistor
    • A. Hefner and D. Blackburn, "An analytical model for the steady-state and transient characteristics of the power insulated-gate bipolar transistor," Solid State Electron., vol. 31, no. 10, pp. 1513-1532, 1988.
    • (1988) Solid State Electron. , vol.31 , Issue.10 , pp. 1513-1532
    • Hefner, A.1    Blackburn, D.2
  • 12
    • 0031139381 scopus 로고    scopus 로고
    • Modeling the turnoff of IGBT's in hard- and soft-switching power converters
    • May
    • M. Trivedi and K. Shenai, "Modeling the turnoff of IGBT's in hard- and soft-switching power converters," IEEE Trans. Electron Devices, vol. 44, pp. 887-893, May 1997.
    • (1997) IEEE Trans. Electron Devices , vol.44 , pp. 887-893
    • Trivedi, M.1    Shenai, K.2
  • 15
    • 33749911874 scopus 로고    scopus 로고
    • INCA, Laboratoire d'Electrotechnique de Grenoble, CNRS, Grenoble, France
    • INCA, Laboratoire d'Electrotechnique de Grenoble, CNRS, Grenoble, France.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.