Advanced SPICE modeling of large power IGBT modules

IEEE Transactions on Industry Applications

Volumn 40, Issue 3, 2004, Pages 710-716

  Azar, Ramy ^a   Udrea, Florin ^a   De Silva, Mahesh ^a   Amaratunga, Gehan ^a   Ng, Wai Tung ^b   Dawson, Francis ^b,c   Findlay, W ^d   Waind, Peter ^d  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b UNIVERSITY OF TORONTO   (Canada)

^c IEEE   (Canada)

^d DYNEX SEMICONDUCTOR LTD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EMITTER BASE JUNCTION; KRAUS MODEL; LATCHUP MODEL; SOFTWARE PACKAGE PSPICE; THYRISTOR EFFECTS; TRENCH IGBT;

APPROXIMATION THEORY; BOUNDARY CONDITIONS; COMPUTER SIMULATION; ELECTRIC CURRENT CONTROL; MOSFET DEVICES; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; THERMAL EFFECTS; THRESHOLD VOLTAGE; THYRISTORS;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 4344645834     PISSN: 00939994     EISSN: None     Source Type: Journal    
DOI: 10.1109/TIA.2004.827456     Document Type: Article

References (7)

1. R. Kraus, P. Türkes, and J. Sigg, "Physics based models of power semiconductor devices for the circuit simulator spice," in Proc. IEEE PESC'98, vol. 2, 1998, pp. 1726-1731.
2. F. Udrea, "Novel MOS-gated bipolar device concepts toward a new generation of power semiconductor devices," Ph.D. dissertation, Dept. Eng., Cambridge Univ., Cambridge, U.K., 1995.
3. Kraus and Mattaush, "Status and trends of power semiconductor device models for circuit simulation," IEEE Trans. Power Electron., vol. 13, pp. 452-65, May 1998.
4. Sigg, Turkes, and Kraus, "Parameter extraction methodology and validation for an electro-thermal physics based NPT IGBT model," in Conf. Rec. IEEE-IAS Annu. Meeting, vol. 2, 1997, pp. 1166-73.
5. T. Trajkovic, "High voltage trench devices," Ph.D. dissertation, Dept. Eng., Cambridge Univ., Cambridge, U.K., 2001.
6. Kraus and Hoffmann, "An analytical model of IGBT's with low emitter efficiency," in Proc. IEEE Int. Symp. Power Semiconductor Devices, 1993, pp. 30-34.
7. Redig and Kraus, "The influence of the base resistance modulation on switching losses in IGBTs," in Conf. Rec. IEEE-IAS Annu. Meeting, vol. 3, 1996, pp. 1500-1506.