Nonpolar GaN Quasi-Wafers Sliced from Bulk GaN Crystals Grown by High-Pressure Solution and HVPE Methods

Nitrides with Nonpolar Surfaces: Growth, Properties, and Devices

Volumn , Issue , 2008, Pages 53-71

  Grzegory, Izabella ^a   Teisseyre, Henryk ^a   Łucznik, Bolesław ^a   Pastuszka, B ^a   Boćkowski, Michał ^a   Porowski, Sylwester ^a  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

Excitonic emission; HVPE growth of GaN; Non polar GaN AlGaN MQW; Seeded growth of GaN; Solution growth of GaN

Indexed keywords

EID: 84889346423     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1002/9783527623150.ch3     Document Type: Chapter

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