Structural perfection of InGaN layers and its relation to photoluminescence

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue 12, 2009, Pages 2626-2631

  Liliental Weber, Z ^a   Yu, K M ^a   Hawkridge, M ^a   Bedair, S ^b   Berman, A E ^b   Emara, A ^b   Khanal, D R ^a,c   Wu, J ^a,c   Domagala, J ^d   Bak Misiuk, J ^d  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b North Carolina State University   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT-FREE; LAYER THICKNESS; PLANAR DEFECT; RUTHERFORD BACK-SCATTERING SPECTROMETRY; SINGLE BAND; STRAINED LAYERS; STRUCTURAL PERFECTION; SUB-LAYERS; TEM;

BUILDING MATERIALS; DEFECTS; INSULATING MATERIALS; LIGHT POLARIZATION; PHOTOLUMINESCENCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

OPTICAL PROPERTIES;

EID: 77955429929     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200982555     Document Type: Conference Paper

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